In the twentieth century, technology has progressed rapidly with the presence of essential
electronic circuit elements such as diodes and transistors. Mobile phones, computers, and
many electronic devices that we have used today are used in these electronic components.
These circuit elements based on semiconductor technology can be placed in the structure that
we call as integrated into a minimal size with the advancement of technology.
Dielectric materials have an essential place in integrated technology in today's technology.
Metal-oxide-semiconductor diodes are used in structures such as solar cells, sensors, memory
memories, processors and field effect transistors. SiO2 is one of the most widely used
dielectric materials in these technologies. It is mainly known for its high optical permeability,
high dielectric coefficient, and low conductivity. The dielectric constant of SiO2 with its
amorphous structure is 3,9, and the band spacing is 8,9-9,0 eV.
The use of materials with a higher number of dielectric layers is on the agenda instead of
SiO2, which is widely used in integrated circuit technology. HfO2, which has a high
dielectric layer number 22, is an alternative to SiO2. HfO2 may be monoclinic, tetragonal and
cubic crystal depending on the conditions of preparation. Various magnification methods can
obtain the HfO2 thin film. These are the atomic layer deposition method, chemical vapor
storage, physical vapor storage, pulsed laser storage, radio frequency sputtering, and plasma
oxidation methods. Although thin films obtained by these methods are of good quality, they
are not economical. The devices used in the sol-gel method and the chemical bath storage
method are more economical than thin films. Moreover, it is easy to control the structural,
optical and electrical properties of the thin films obtained by these methods.
In this study, a coating of HfO2 thin films with sol-gel dipping method on glass substrates;
The structural, superficial and optical properties of these thin films were investigated.
Structural properties X-ray diffraction pattern (XRD), superficial properties of the scanning
electron microscopy (SEM) and optical properties of the UV-VIS spectrum measurements
were used. Then, the same structure with 1%, 5% and 10% silver doped HfO2 thin films were
obtained. Structural, superficial and optical properties of these structures were also
investigated. The results were compared and interpreted considering the studies in the
literature.
Thin film HfO2 to be coated 1 mm × 26 mm × 76 mm size microscope for the cleaning of the
glass 18-degree resistance deionized water containing ultrasonic bath for 1 hour was left. The
same glass was left in acetone in the ultrasonic bath for 1 hour. Finally, the glasses were left
in the tube oven at 200 ° C for 10 minutes to remove deposits on the layer surface.
In this study, 4 different solutions were prepared: pure HfO2 and 1%, 5%, 10% Ag-doped
HfO2. Solutions respectively:
Unadulterated HfO2 Solution: 0.332 grams of hafnium chloride was left in a beaker. Then,
50 mL ethanol was added to the beaker and stirred for 2 hours with a magnetic stirrer.
Finally, 10 mL of deionized water was added to the same solution, and the solution was
stirred for 3 hours with the magnetic stirrer.
1% Ag Doped HfO2 Solution: 0.33230 grams of hafnium chloride and- grams of
silver nitrate were dropped into a beaker. Then, 50 mL ethanol was added to the beaker and
stirred for 2 hours with a magnetic stirrer. Finally, 10 mL of deionized water was added to the
same solution, and the solution was stirred for 3 hours with the magnetic stirrer.
The cleaned al-layer glass surfaces were immersed 15 times in solution with Holmarc HOTH-O1 sol-gel immersion coating device. After each immersion, the glasses were allowed to
anneal in a tube oven at 500 ° C for 10 minutes. The coated films were finally allowed to
anneal in a tube oven at 500 ° C for 1 hour.
X-ray diffraction patterns (XRD) of thin films coated on glass substrate surfaces were carried
out in the 2θ range using Rigaku RadB and CuKα1 radiation. The optical measurements of
these films were also made using Shimadzu UV-3600 UV-VIS-NIR spectrophotometer at
room temperature.
The thickness of the coated HfO2 thin film surfaces was measured with Avantes AvaSpecULS2048 thin film thickness measurement system.